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DC Field | Value | Language |
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dc.contributor.advisor | Tiwari, Shree Prakash | - |
dc.date.accessioned | 2017-07-07T05:54:03Z | - |
dc.date.available | 2017-07-07T05:54:03Z | - |
dc.date.issued | 2016-06 | - |
dc.identifier.citation | Gupta, Charu. (2016). Carbon-Based Multiple-Gate Field-Effect Transistors (Master's thesis). Indian Institute of Technology Jodhpur, Jodhpur. | en_US |
dc.identifier.uri | http://theses.iitj.ac.in:8080/jspui/handle/123456789/103 | - |
dc.description.abstract | The goal of this study is to establish the importance of multiple-gate architecture for the realization of one-dimensional Field-effect transistors having a steep sub-threshold swing and an appreciable on-state performance. The task for the thesis comprised of, first, the implementation of a self-made simulation tool for quantum simulations on carbon-based nanostructures exploiting the superlattice effect based on multiple-gate substrate; Second, the experimental work including clean room fabrication and device characterization for determining some of the design features of the proposed device. For the said purpose, an arrangement consisting of a large number of gates placed next to each other with an inter-gate distance of the order of few nanometers is studied. Due to the excellent gate control attained from the multiple-gate organization, the manipulation of the conduction and the valence band profile at the nanoscale is achieved. This work provides a simulation platform to study the effect of electrostatic doping on the potential profile in carbon-material nanostructures like graphene/carbon nanotube. In addition, an energy filter obtained from a gate-induced superlattice is simulated. The application of alternating gate voltages on the multiple gates resulted in a superlattice structure that is employed as an energy-filter for blocking hot-electrons to achieve a superior switching behaviour in the device. The associated parameters like- voltages on the multiple gates, thickness of the gates and the inert-gate dielectric thickness are further varied to enable fine tuning of the gate-induced superlattice and hence, optimization of the energy-filter. Lastly, experiments to determine important design parameters for the proposed device are performed. For the implementation of an adjustable superlattice energy filter, high alternating voltages are applied on the multiple-gates. Hence, the breakdown voltage of the inter-gate dielectric becomes critical. Therefore, a set of experiments are carried out to determine the strength of the dielectric with variable thickness. | en_US |
dc.description.statementofresponsibility | by Charu Gupta | en_US |
dc.format.extent | xi, 43p. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Indian Institute of Technology Jodhpur | en_US |
dc.rights | IIT Jodhpur | en_US |
dc.subject.ddc | Carbon-Based Multiple-Gate | en_US |
dc.subject.ddc | Field-Effect Transistors | - |
dc.title | Carbon-Based Multiple-Gate Field-Effect Transistors | en_US |
dc.type | Thesis | en_US |
dc.creator.researcher | Gupta, Charu | - |
dc.date.registered | 2014 | - |
dc.date.awarded | 2016 | - |
dc.publisher.place | Jodhpur | en_US |
dc.publisher.department | Center for Information Communication and Technology | en_US |
dc.type.degree | Master of Technology (M.Tech.) | en_US |
dc.format.accompanyingmaterial | CD | en_US |
dc.description.note | ill.; including bibliography | en_US |
dc.identifier.accession | TM00092 | - |
Appears in Collections: | M. Tech. Theses |
Files in This Item:
File | Size | Format | |
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TM00092.pdf | 2.39 MB | Adobe PDF | View/Open Request a copy |
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